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| HAT3010R Silicon N/P Channel Power MOS FET High Speed Power Switching ADE-208-1402F (Z) 7th. Edition Feb. 2002 Features * Low on-resistance * Capable of 4.5 V gate drive * High density mounting Outline SOP-8 8 5 76 3 12 78 DD 56 DD 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Nch Pch www..com www..com HAT3010R Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature VDSS VGSS ID ID(pulse) IDR Pch Pch Tch Tstg Note2 Note3 Note1 Unit Pch -60 20 -5 -40 -5 2 3 150 -55 to +150 V V A A A W W C C 60 20 6 48 6 2 3 150 -55 to +150 Notes: 1. PW 10s, duty cycle 1 % 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Rev.6, Feb. 2002, page 2 of 14 HAT3010R Electrical Characteristics (Ta = 25C) * N Channel Item Symbol Min 60 20 -- -- 1.0 -- -- 7 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 30 40 11 1050 150 90 15 15 55 10 0.85 50 Max -- -- 10 1 2.5 38 60 -- -- -- -- -- -- -- -- 1.10 -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 3 A, VGS = 10 V ID = 3 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V, ID = 3 A VDD 30 V RL = 10 Rg = 4.7 IF = 6 A, VGS = 0 Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 5. Pulse test V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr ID = 3 A, VGS = 4.5 V Note4 IF = 6 A, VGS = 0 diF/ dt = 100 A/s Rev.6, Feb. 2002, page 3 of 14 HAT3010R * P Channel Item Symbol Min -60 20 -- -- -1.0 -- -- 3 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 60 90 5 1350 135 85 20 15 55 10 -0.85 50 Max -- -- 10 -1 -2.5 76 130 -- -- -- -- -- -- -- -- -1.10 -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -60 V, VGS = 0 VDS = -10 V, I D = -1 mA ID = -2.5 A, VGS = -10 V ID = -2.5 A, VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz VGS = -10 V, ID = -2.5 A VDD -30 V RL = 12 Rg = 4.7 IF = -5 A, VGS = 0 Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 5. Pulse test IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr ID = -2.5 A, VGS = -4.5 V Note4 IF = -5 A, VGS = 0 diF/ dt = 100 A/s Rev.6, Feb. 2002, page 4 of 14 HAT3010R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 Channel Dissipation Pch (W) 2.0 2 ive Dr Op 1 Dr at er 1.0 ive Op ion at ion 150 Ta (C) 200 er 0 50 100 Ambient Temperature Rev.6, Feb. 2002, page 5 of 14 HAT3010R Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 Normalized Transient Thermal Impedance s (t) D=1 1 0.1 0.05 0.02 0.01 0.01 ch - f(t) = s (t) x ch - f ch - f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40x40x1.6 mm) p ot uls e PDM PW T 0.001 h 1s D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 Pulse Width PW (S) 100 1000 10000 Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 ch - f(t) = s (t) x ch - f ch - f = 166C/W, Ta = 25C When using the glass epoxy board (FR4 40x40x1.6 mm) lse PDM PW T 0.001 1s ho u tp D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 Pulse Width PW (S) 100 1000 10000 Rev.6, Feb. 2002, page 6 of 14 HAT3010R * N Channel Maximum Safe Operation Area 10 s 10 0 s PW 1 ms =1 0m DC s O pe rat ion (P W N Typical Output Characteristics 10 10 V 4V I D (A) 100 30 I D (A) 3V 10 3 1 0.3 8 Drain Current 6 Drain Current < 1 ote 0.1 Operation in 0s 5 ) 0.03 this area is limited by R DS(on) 0.01 Ta = 25 C 0.003 1 shot Pulse 0.001 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) 4 Pulse Test 2 2.5 V VGS = 2 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Transfer Characteristics Drain to Source Saturation Voltage V DS(on) (mV) Drain to Source Saturation Voltage vs. Gate to Source Voltage 300 Pulse Test 10 V DS = 10 V Pulse Test (A) 8 ID 200 ID=5A 100 2A 1A 0 15 5 10 20 Gate to Source Voltage V GS (V) 6 Drain Current 4 Tc = 75C 2 -25C 0 1 2 3 Gate to Source Voltage 4 V GS (V) 5 25C Rev.6, Feb. 2002, page 7 of 14 HAT3010R Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.5 0.2 0.1 VGS = -4.5 V -10 V Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 1, 2 A 0.06 V GS = 4.5 V 1, 2, 5 A 0.02 10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) ID=5A Static Drain to Source on State Resistance R DS(on) ( ) Drain to Source On State Resistance R DS(on) () 0.05 0.04 0.02 0.01 1 10 3 Drain Current 30 I D (A) 100 Forward Transfer Admittance |yfs| (S) 50 20 10 5 2 1 0.5 0.1 Forward Transfer Admittance vs. Drain Current Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 di / dt = 100 A / s V GS = 0, Ta = 25C Tc = -25C 25C 75C 200 100 50 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 20 10 0.1 Drain Current I D (A) 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) Rev.6, Feb. 2002, page 8 of 14 HAT3010R Typical Capacitance vs. Drain to Source Voltage V DS (V) Dynamic Input Characteristics V GS (V) Gate to Source Voltage 5000 Capacitance C (pF) 100 ID=6A V DD = 50 V 25 V 10 V V DS 20 2000 1000 500 200 100 50 Crss 20 10 0 VGS = 0 f = 1 MHz 10 20 30 40 50 Drain to Source Voltage V DS (V) Coss Ciss 80 16 V GS 12 Drain to Source Voltage 60 40 8 20 V DD = 50V 25V 10V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 0 Switching Characteristics 1000 Reverse Drain Current I DR (A) Reverse Drain Current vs. Souece to Drain Voltage 10 Pulse Test 8 10 V 6 5V Switching Time t (ns) 300 100 30 10 3 1 0.1 t d(off) tr t d(on) tf V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 0.3 1 3 10 30 Drain Current I D (A) 100 4 V GS = 0, -5 V 2 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) Rev.6, Feb. 2002, page 9 of 14 HAT3010R * P Channel Maximum Safe Operation Area 10 s 10 0 s PW 1 ms =1 0m DC s Op era tio n( PW -100 -30 I D (A) Typical Output Characteristics -10 -10 V I D (A) Pulse Test -3.5 V -10 -3 -1 -0.3 -8 -6 -4 -2 -6 V -4.5 V Drain Current < 1 ote -0.1 Operation in 0s 5 ) -0.03 this area is limited by R DS(on) -0.01 Ta = 25C -0.003 1 shot Pulse -0.001 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) N Drain Current VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Transfer Characteristics Drain to Source Saturation Voltage V DS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage -1 -0.8 -0.6 -0.4 -0.2 0 Pulse Test -10 (A) -8 -6 -4 -2 V DS = -10 V Pulse Test Drain Current ID I D = -5 A -2 A -1 A -15 -5 -10 -20 Gate to Source Voltage V GS (V) Tc = 75C 25C 0 -25C -1 -2 -3 -4 -5 Gate to Source Voltage V GS (V) Rev.6, Feb. 2002, page 10 of 14 HAT3010R Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance R DS(on) () 1.0 Pulse Test 0.5 0.2 0.1 VGS = -4.5 V Static Drain to Source on State Resistance R DS(on) ( ) Static Drain to Source on State Resistance vs. Temperature 0.25 Pulse Test 0.20 -5 A 0.15 V GS = -4.5 V 0.10 -5 A -1, -2 A I D = -1,-2 A 0.05 -10 V 0.02 0.01 -1 -10 -3 Drain Current -30 I D (A) -100 0.05 0 -40 -10 V 0 40 80 120 160 Case Temperature Tc (C) Forward Transfer Admittance |yfs| (S) 50 20 10 5 2 1 Forward Transfer Admittance vs. Drain Current Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time 1000 500 di / dt = 100 A / s V GS = 0, Ta = 25C 200 100 50 Tc = -25C 25C 75C VDS = -10 V Pulse Test -1 -3 -10 -30 -100 20 10 -0.1 -0.3 -1 -3 -10 -30 -100 Reverse Drain Current I DR (A) 0.5 -0.1 -0.3 Drain Current I D (A) Rev.6, Feb. 2002, page 11 of 14 HAT3010R Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics V DS (V) 5000 Capacitance C (pF) 2000 1000 500 200 100 50 Crss 20 10 0 VGS = 0 f = 1 MHz -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) Coss Ciss -20 -40 V DS -60 -80 -4 I D = -5 A -8 -12 -16 -20 40 Drain to Source Voltage V DD = -10 V -25 V -50 V V GS -100 0 8 16 24 32 Gate Charge Qg (nc) Switching Characteristics 1000 300 100 30 10 3 1 -0.1 -0.3 tf VGS = -10 V, VDD = -30 V PW = 5 s, duty < 1 % -1 -3 -10 -30 Drain Current I D (A) -100 t d(off) tr t d(on) Reverse Drain Current vs. Souece to Drain Voltage -10 Reverse Drain Current I DR (A) Pulse Test -8 -10 V -6 -4 -2 -5 V V GS = 0, 5 V Switching Time t (ns) 0 -0.4 -0.8 -1.2 Source to Drain Voltage -1.6 -2.0 V SD (V) Rev.6, Feb. 2002, page 12 of 14 Gate to Source Voltage V GS (V) 0 V DD = -10V -25V -50V 0 HAT3010R Package Dimensions As of July, 2001 Unit: mm 4.90 5.3 Max 5 8 3.95 1 4 *0.22 0.03 0.20 0.03 1.75 Max 0.75 Max 6.10 - 0.30 + 0.10 1.08 0 - 8 + 0.67 0.14 - 0.04 + 0.11 1.27 0.60 - 0.20 *0.42 0.08 0.40 0.06 0.15 0.25 M *Dimension including the plating thickness Base material dimension Hitachi Code JEDEC JEITA Mass (reference value) FP-8DA Conforms -- 0.085 g Rev.6, Feb. 2002, page 13 of 14 HAT3010R Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.6, Feb. 2002, page 14 of 14 |
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